Document Type
Article
Publication Date
2014
Publication Source
Applied Physics Letters
Abstract
Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phasegrowth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yieldsmaterials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.
Inclusive pages
261604-1 to 261604-5
ISBN/ISSN
0003-6951
Document Version
Published Version
Copyright
Copyright © 2014, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
Publisher
AIP Publishing
Volume
104
Peer Reviewed
yes
eCommons Citation
Muratore, Christopher; Hu, Jianjun; Wang, Baoming; Haque, M. Amanul; Bultman, John E.; Jespersen, Michael L.; McConney, Michael E.; and Naguy, R. D., "Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition" (2014). Chemical and Materials Engineering Faculty Publications. 99.
https://ecommons.udayton.edu/cme_fac_pub/99
Included in
Other Chemical Engineering Commons, Other Materials Science and Engineering Commons, Polymer and Organic Materials Commons
Comments
This document is provided for download in compliance with the publisher's policy on self-archiving. Permission documentation is on file.