Transmission Electron Microscopy Study of Ni Silicides Formed during Metal-Induced Silicon Growth

Author(s)

Elena A. Guliants, University of DaytonFollow
Wayne A. Anderson, State University of New York at Buffalo
L. P. Guo, State University of New York at Buffalo
Vadim V. Guliants, University of Cincinnati

Document Type

Article

Publication Date

4-2001

Publication Source

Thin Solid Films

Abstract

Polycrystalline silicon thin films grown on a Ni prelayer by the metal-induced growth (MIG) technique were studied by cross-sectional transmission electron microscopy and shown to possess a columnar structure. A Ni silicide transition region is formed due to the reaction between a fine-grained metallic Ni with atomic Si provided by the deposition source. This region exhibits a stratified structure as revealed by selected area diffraction patterns. The top layer is found to be a pure NiSi₂ phase, which provides nucleation sites for the epitaxial Si growth. The bottom layer represents a mixture of several randomly oriented phases with a more Ni-rich composition. Co-existence of the above mentioned phases suggests that the silicide formation is controlled by the Ni-to-Si concentration ratio rather than temperature. No migration of the Ni silicide precipitates into the silicon film is observed. The formation mechanism of poly-Si on a Ni prelayer is discussed.

Inclusive pages

74–80

ISBN/ISSN

0040-6031

Comments

Permission documentation is on file.

Copyright

Copyright © 2001, Elsevier

Publisher

Elsevier

Volume

385

Peer Reviewed

yes

Issue

1-2

eCommons Citation

Guliants, Elena A.; Anderson, Wayne A.; Guo, L. P.; and Guliants, Vadim V., "Transmission Electron Microscopy Study of Ni Silicides Formed during Metal-Induced Silicon Growth" (2001). Electrical and Computer Engineering Faculty Publications. 122.
https://ecommons.udayton.edu/ece_fac_pub/122