Document Type

Article

Publication Date

2002

Publication Source

Applied Physics Letters

Abstract

Polycrystalline Si films, 0.5-mm thick, were obtained as a result of metal-induced growth by sputtering from a Si target on 25 nm thick Ni prelayers at 525 °C. Silicon grew heteroepitaxially on the NiSi2 layer formed due to the reaction between the sputtered Si atoms and Ni. Schottky diodes were fabricated on the Si films by deposition of a Schottky metal on the front surface of the film while Ni disilicide provided an intimate ohmic contact at the back. A Pd/n-Si diode using an n-Si film annealed for 2 h at 700 °C in forming gas demonstrated a rectification ratio of 106, while an as-deposited p-Si film provided an Al/p-Si diode with rectification of five orders of magnitude. Schottky barrier properties are briefly discussed.

Inclusive pages

1474-1476

ISBN/ISSN

0003-6951

Document Version

Published Version

Comments

This document is provided for download in compliance with the publisher's policy on self-archiving. Permission documentation is on file.

Publisher

American Institute of Physics

Volume

80

Issue

8

Peer Reviewed

yes