Document Type

Article

Publication Date

2002

Publication Source

Journal of Applied Physics

Abstract

A nonlithographic approach to produce self-assembled spatially separated Si structures for nanoelectronic applications was developed, employing the metal-induced silicon growth. Densely packed Si whiskers, 500–800 nm thick and up to 2500 nm long, were obtained by magnetron sputtering of Si on a 25 nm thick Ni prelayer at 575 °C. The nucleation of the NiSi2 compound at the Ni–Si interface followed by the Si heteroepitaxy on the lattice-matched NiSi2 is suggested to be the driving force for the whisker formation.

Inclusive pages

6077-6080

ISBN/ISSN

0021-8979

Document Version

Published Version

Comments

This document is provided for download in compliance with the publisher's policy on self-archiving. Permission documentation is on file.

Publisher

American Institute of Physics

Volume

91

Issue

9

Peer Reviewed

yes