Morphological Changes while Growing Nickel Monosilicide Nanowires

Author(s)

Joondong Kim, State University of New York at Buffalo
Wayne A. Anderson, State University of New York at Buffalo
Elena A. Guliants, University of DaytonFollow
Christopher E. Bunker, Air Force Research Laboratory

Document Type

Conference Paper

Publication Date

2004

Publication Source

MRS Fall Meeting

Abstract

Nickel monosilicide (NiSi) nanowires (NWs) have been fabricated in a DC magnetron system by the Metal Induced Growth (MIG) method. The NW growing stages were sequentially observed by scanning electron microscopy. Deposited Ni on SiO₂ coated Si wafers has been first grooved and agglomerated by thermal heating at 575 °C. In the sputtering procedure, Ni as a catalyst reacted with sputtered Si forming clusters. Nanowires were grown in the same directions on each cluster. Raman spectroscopy and Energy Dispersive Spectroscopy indicated the NW composition as NiSi. The linear propagating property of NWs was used to form self-assembled nanobridges (NBs) in trenched Si wafers. The affinity of NWs can be used on various substrate materials with less thermal damage. NiSi composed MIG-NBs are promising candidates as nanoscale contacts due to the features of low resistivity and low temperature processing giving less potential damage on fabricated structures.

ISBN/ISSN

1946-4274

Comments

Permission documentation is on file.

Copyright

Copyright © 2004, Materials Research Society

Publisher

Cambridge University Press

Volume

854

Peer Reviewed

yes

eCommons Citation

Kim, Joondong; Anderson, Wayne A.; Guliants, Elena A.; and Bunker, Christopher E., "Morphological Changes while Growing Nickel Monosilicide Nanowires" (2004). Electrical and Computer Engineering Faculty Publications. 131.
https://ecommons.udayton.edu/ece_fac_pub/131