Performance of thin film ferroelectrics with dopant-ion charges
Document Type
Article
Publication Date
2008
Publication Source
Integrated Ferroelectrics: An International Journal
Abstract
This paper studied the effect of dopant-ion charges on the performance of thin film ferroelectrics. Field distributions and capacitance of ferroelectric thin films with different dopant-ion charge densities are analyzed. The non-linearity of the electric field inside the thin film increases with the dopant-ion charge density and decreases with the linear permittivity of the ferroelectric thin film. Once the applied voltage is strong enough, the field distribution will become linear. The FE thin film peak capacitance reduces with the dopant-ion charge density and the total area under the C-V curve between two large voltages with opposite signs is fixed.
Inclusive pages
69-83
ISBN/ISSN
1058-4587
Publisher
Taylor & Francis Group
Volume
97
Peer Reviewed
yes
Issue
1
Keywords
Ferroelectrics, dopant-ion charges, linear polarization, switching polarization, electric-field distribution in ferroelectrics
eCommons Citation
Li, Huadong; Subramanyam, Guru; and Wang, Jiadong, "Performance of thin film ferroelectrics with dopant-ion charges" (2008). Electrical and Computer Engineering Faculty Publications. 19.
https://ecommons.udayton.edu/ece_fac_pub/19
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