Title

Microwave Dielectric Properties of Epitaxial Mn-doped Ba(Zr,Ti)O-3 Thin Films on LaAlO3 Substrates

Document Type

Article

Publication Date

8-13-2013

Publication Source

Ferroelectrics Letters Section

Abstract

Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti0.8)O3 thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from x-ray diffraction suggest that the films are c-axis oriented with the interface relationship of [101]Mn:BZT//[100]LAO and (001)Mn:BZT //(001)LAO. The microwave dielectric property measurements (13–17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.2Ti0.8)O3 thin films can be used for the development of the room temperature tunable microwave elements and related device applications.

Inclusive pages

65-69

ISBN/ISSN

0731-5171

Comments

The document available for download is the authors' accepted manuscript, provided in compliance with publisher policies on self-archiving and with author permission; permission documentation is on file.

Publisher

Taylor & Francis Group

Volume

40

Issue

1-3

Peer Reviewed

yes

Keywords

Ferroelectric, dielectric, thin films, epitaxial, Ba(Zr, Ti)O3, microwave