Microwave Dielectric Properties of Epitaxial Mn-doped Ba(Zr,Ti)O-3 Thin Films on LaAlO3 Substrates
Ferroelectrics Letters Section
Environmental friendly ferroelectric relaxor Ba(Zr0.2Ti0.8)O3 thin films with an additional 2% Mn dopant were epitaxially fabricated on the (001) LaAlO3 single crystal substrates by pulsed laser deposition. Microstructure characterizations from x-ray diffraction suggest that the films are c-axis oriented with the interface relationship of Mn:BZT//LAO and (001)Mn:BZT //(001)LAO. The microwave dielectric property measurements (13–17.5 GHz) reveal that the films have excellent dielectric properties with large tunability, high dielectric constant, and low dielectric loss, which the average value is 25.9%, 169 and 0.054, respectively. It is indicated that the additional 2% Mn doped Ba(Zr0.2Ti0.8)O3 thin films can be used for the development of the room temperature tunable microwave elements and related device applications.
Taylor & Francis Group
Ferroelectric, dielectric, thin films, epitaxial, Ba(Zr, Ti)O3, microwave
Liu, Ming; Ma, Chunrui; Liu, Jian; Collins, Gregory; Chen, Chonglin; Alemayehu, Andy D.; Subramanyam, Guru; Dai, Chao; Lin, Yuan; and Bhalla, Amar, "Microwave Dielectric Properties of Epitaxial Mn-doped Ba(Zr,Ti)O-3 Thin Films on LaAlO3 Substrates" (2013). Electrical and Computer Engineering Faculty Publications. 29.