Title

Active Cooling of Metal Oxide Semiconductor Controlled Thyristor Using Venturi Flow

Document Type

Article

Publication Date

1996

Publication Source

Journal of Propulsion and Power

Abstract

A metal oxide semiconductor controlled thyristor (MCT) is a solid-state high-current switching device. Because of its high-current and high-heat dissipation, this device requires an advanced cooling arrangement. A sample MCT device was successfully tested in a conduction mode up to 95 A using a new technique called venturi cooling.

Steady-state operational tests were performed under various coolant temperatures and flow rates. The highest device temperature was 168.5°C, whereas the power dissipation and heat flux were 170 W and 257 W/ cm2, respectively. Comparison with a commercial liquid-cooled cold plate showed that the cooling effectiveness is nearly double for the venturi flow. Measured junction-to-case thermal resistance of the MCT was 0.213°C/ W for venturi flow compared to 0.421°C/W for the commercial cold plate. Venturi flow cooling is highly recommended for MCT applications.

Inclusive pages

398-404

ISBN/ISSN

0748-4658

Comments

Permission documentation is on file.

Publisher

American Institute of Aeronautics and Astronautics

Volume

12

Issue

2

Peer Reviewed

yes