Applied Physics Letters
Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phasegrowth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS2 on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350 °C. Synthesis of few-layer MoS2 in this ultra-high vacuum physical vapor deposition process yieldsmaterials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.
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Copyright © 2014, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.
Muratore, Christopher; Hu, Jianjun; Wang, Baoming; Haque, M. Amanul; Bultman, John E.; Jespersen, Michael L.; McConney, Michael E.; and Naguy, R. D., "Continuous Ultra-Thin MoS2 Films Grown by Low-Temperature Physical Vapor Deposition" (2014). Chemical and Materials Engineering Faculty Publications. 99.
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