Document Type
Article
Publication Date
2002
Publication Source
Applied Physics Letters
Abstract
Polycrystalline Si films, 0.5-mm thick, were obtained as a result of metal-induced growth by sputtering from a Si target on 25 nm thick Ni prelayers at 525 °C. Silicon grew heteroepitaxially on the NiSi2 layer formed due to the reaction between the sputtered Si atoms and Ni. Schottky diodes were fabricated on the Si films by deposition of a Schottky metal on the front surface of the film while Ni disilicide provided an intimate ohmic contact at the back. A Pd/n-Si diode using an n-Si film annealed for 2 h at 700 °C in forming gas demonstrated a rectification ratio of 106, while an as-deposited p-Si film provided an Al/p-Si diode with rectification of five orders of magnitude. Schottky barrier properties are briefly discussed.
Inclusive pages
1474-1476
ISBN/ISSN
0003-6951
Document Version
Published Version
Copyright
Copyright © 2002, American Institute of Physics
Publisher
American Institute of Physics
Volume
80
Peer Reviewed
yes
Issue
8
eCommons Citation
Guliants, Elena A.; Ji, Chunhai; Song, Young J.; and Anderson, Wayne A., "A 0.5 μm Thick Polysilicon Schottky Diode with Rectification Ratio of 10^6" (2002). Electrical and Computer Engineering Faculty Publications. 126.
https://ecommons.udayton.edu/ece_fac_pub/126
Included in
Computer Engineering Commons, Electrical and Electronics Commons, Electromagnetics and Photonics Commons, Optics Commons, Other Electrical and Computer Engineering Commons, Systems and Communications Commons
Comments
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