Journal of Applied Physics
A nonlithographic approach to produce self-assembled spatially separated Si structures for nanoelectronic applications was developed, employing the metal-induced silicon growth. Densely packed Si whiskers, 500–800 nm thick and up to 2500 nm long, were obtained by magnetron sputtering of Si on a 25 nm thick Ni prelayer at 575 °C. The nucleation of the NiSi2 compound at the Ni–Si interface followed by the Si heteroepitaxy on the lattice-matched NiSi2 is suggested to be the driving force for the whisker formation.
Copyright © 2002, American Institute of Physics
American Institute of Physics
Guliants, Elena A.; Ji, Chunhai; and Anderson, Wayne A., "Self-Assembly of Spatially Separated Silicon Structures by Si Heteroepitaxy on Ni Disilicide" (2002). Electrical and Computer Engineering Faculty Publications. 128.
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