The Role of Nucleation and Heteroepitaxial Processes in Nanostructuring of Si

Author(s)

Elena A. Guliants, University of DaytonFollow
Chunhai Ji, State University of New York at Buffalo
Wayne A. Anderson, State University of New York at Buffalo

Document Type

Article

Publication Date

5-2002

Publication Source

Journal of Electronic Materials

Abstract

Self-assembly represents a large prospective class of nanoscale fabrication techniques for future electronics. Understanding the mechanisms underlying the processes of nanostructure formation is crucial for establishing the control over their dimensions, spatial distribution, and uniformity. In this work, nanostructuring of Si was studied by silicon heteroepitaxy on NiSi2 nucleated at the Ni/Si interface during low-temperature Si sputtering on a thin Ni prelayer. The formation of spatially separated Si wires is discussed in terms of nucleation phenomenon, strain relaxation in the lattice-matched systems, and Si deposition kinetics.

Inclusive pages

466-471

ISBN/ISSN

0361-5235

Comments

Permission documentation is on file.

Copyright

Copyright © 2002, Springer

Publisher

Springer

Volume

31

Peer Reviewed

yes

Issue

5

eCommons Citation

Guliants, Elena A.; Ji, Chunhai; and Anderson, Wayne A., "The Role of Nucleation and Heteroepitaxial Processes in Nanostructuring of Si" (2002). Electrical and Computer Engineering Faculty Publications. 129.
https://ecommons.udayton.edu/ece_fac_pub/129