A memristor device model

Document Type

Article

Publication Date

9-8-2011

Publication Source

IEEE Electron Device Letters

Abstract

This letter proposes a new mathematical model for memristor devices. It builds on existing models and is correlated against several published device characterizations. This letter identifies significant discrepancies between the existing models and published device characterization data. The proposed model addresses these discrepancies. In particular, it allows modeling of memristor-based neuromorphic systems.

Inclusive pages

1436 - 1438

ISBN/ISSN

0741-3106

Comments

Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting or republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

Publisher

IEEE

Volume

32

Peer Reviewed

yes

Issue

10

Keywords

memristors;semiconductor device models;memristor device model;memristor-based neuromorphic system;Conductivity;Integrated circuit modeling;Mathematical model;Memristors;Neuromorphics;Simulation;Threshold voltage;Device model;memristive;memristor;simulation


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