We experimentally probe the multilevel response of GeTe, Ge2Sb2Te5 (GST), and 4% tungsten-doped GST (W-GST) phase change materials (PCMs) using two wavelengths of light: 1550 nm, which is useful for telecom-applications, and near-infrared 780 nm, which is a standard wavelength for many experiments in atomic and molecular physics. We find that the materials behave differently with the excitation at the different wavelengths and identify useful applications for each material and wavelength. We discuss thickness variation in the thin films used as well and comment on the interaction of the interface between the material and the substrate with regard to the multilevel behavior. Due to the differences in penetration depths, absorption, and index contrast, different PCMs could be more suitably used depending on the application and wavelength of operation.
National Science Foundation, RY18-22
Sevison, Gary A.; Burrow, Joshua A.; Guo, Haiyun; Sarangan, Andrew M.; Hendrickson, Joshua R.; and Agha, Imad, "Wavelength and power dependence on multilevel behavior of phase change materials" (2021). Electro-Optics and Photonics Faculty Publications. 125.