Net modal gain analysis of high-frequency InGaAs semiconductor lasers operating at high temperatures
Date of Award
1998
Degree Name
M.S. in Electro-Optics Engineering
Department
Department of Electro-Optics and Photonics
Keywords
Semiconductor lasers, Gallium arsenide semiconductors
Rights Statement
Copyright © 1998, author
Recommended Citation
Siskaninetz, William John, "Net modal gain analysis of high-frequency InGaAs semiconductor lasers operating at high temperatures" (1998). Graduate Theses and Dissertations. 5635.
https://ecommons.udayton.edu/graduate_theses/5635
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