Experimental Investigation of Ge1-XSnX Waveguide Amplified Spontaneous Emission and Theoretical Modeling Development
Date of Award
Ph.D. in Electro-Optics and Photonics
Department of Electro-Optics and Photonics
Ge1-xSnx alloys represent a new class of optically-active materials for integrated optoelectronics on-Si. In this work, rib waveguides were fabricated from highly n-type doped GeSn layers with Sn content at 4.4-7.0 % grown on Ge-buffered Si substrates. The waveguides were optically pumped using a 976 nm continuous wave laser, and the emission spectrum was collected experimentally and analyzed. The results indicate that population inversion was achieved, and optical gain via stimulated emission was observed from cavities despite the loss level in the cavity prevented the onset of lasing. Theoretical models for the waveguide emission power dependence were developed and the results were compared to the data. Several parameters were modeled to predict lasing conditions beyond experimental limits. The results show that achieving room temperature (RT) lasing from GeSn waveguides could be achieved with minor improvements in material quality and device design.
Optics, Materials Science, optical interconnects, on Si light source, GeSn, laser, amplified spontaneous emission, laser modeling
Copyright 2021, author.
Li, Zairui, "Experimental Investigation of Ge1-XSnX Waveguide Amplified Spontaneous Emission and Theoretical Modeling Development" (2021). Graduate Theses and Dissertations. 6972.