Conversion of Bi₄Se₃ to Bi₂Se₃ via post-annealing under Se flux


Conversion of Bi₄Se₃ to Bi₂Se₃ via post-annealing under Se flux



Ryan P. Laing


Presentation: 9:00 a.m.-10:15 a.m., Kennedy Union Ballroom

Additional authors:
Ryan Laing¹ ² , Tobin Muratore¹ ² , Margaret Brown¹ ² , Said Elhamri¹ ² , Joseph Corbett¹ ³ Amber Reed¹

1. Air Force Research Lab, Wright-Patterson AFB, Ohio 45433, United States
2. Department of Physics, University of Dayton, Dayton, Ohio
3. UES, Inc., 4401 Dayton-Xenia Rd, Dayton, OH 45432



Bi₄Se₃ and Bi₂Se₃ are materials with topologically protected surface states that are currently thesubject of extensive research as potential next-generation quantum technologies. In this study,DC magnetron sputtering was used to grow Bi₄Se₃ thin films. Conversion of Bi₄Se₃ to Bi₂Se₃was explored via post-annealing under Se flux at moderate temperatures. The Se flux wasgenerated by RF magnetron sputtering of a Se target onto Bi₄Se₃ films. Bi₄Se₃ was grown undertwo morphological distinct regimes, an atomically flat surface and faceted surface to contrast theSe incorporation through flat surfaces or grain boundaries. Energy dispersive x-ray spectroscopywas used to analyze film composition, while X-ray diffraction was used to verify crystalstructure and orientation. Scanning electron microscopy additionally verified morphologicalchanges post annealing. Determining Se percolation into the film under different temperaturesand geometries allows an expansion of thin film sputtering capabilities by further control of filmcomposition under various conditions. This work can lead to techniques in tailoring the fermi-level in chalcogenides.

Publication Date


Project Designation

Independent Research

Primary Advisor

Said Elhamri

Primary Advisor's Department



Stander Symposium project, College of Arts and Sciences

Conversion of Bi₄Se₃ to Bi₂Se₃ via post-annealing under Se flux