Design of GeSn single photon avalanche photodiodes for short wave infrared detection

Design of GeSn single photon avalanche photodiodes for short wave infrared detection

Presenter(s)

Alexander Skender

Comments

11:00-11:20, Kennedy Union 311

Description

There is a desire for single photon avalanche diodes (SPADs) capable of detecting light in the SWIR wavelengthrange for Lidar systems to increase their range while maintaining eye safety. It is also desirable for these SPADsto be CMOS compatible. Ge-on-Si SPADs have been demonstrated by several groups, but Ge only extends thewavelength response to around 1.6 µm. This paper investigates the design of SPADs using GeSn as an absorberto increase the wavelength response to 2 µm. We will compare the use of Si and Ge as a material for themultiplication region.

Publication Date

4-23-2025

Project Designation

Graduate Research

Primary Advisor

Partha P. Banerjee

Primary Advisor's Department

Electro-Optics and Photonics

Keywords

Stander Symposium, School of Engineering

Design of GeSn single photon avalanche photodiodes for short wave infrared detection

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