Presenter(s)

Tristan Quach

Comments

2:00-2:20, Kennedy Union 222

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Description

As indicated by the consistent validation of Moore’s Law, decreasing the size of electronics has been a perpetual goal for decades. Memristors have a unique way of decreasing the size of devices by performing the functions of what would normally need a group of devices. This is done by making use of the multiple states of a memristor. Additional useful qualities of memristors include in-memory computing, low power consumption, and nonvolatile memory. There are many possible dielectrics that can be used for memristive devices, but barium-based dielectrics show promise. Sixty-forty and seventy-thirty compositions of barium strontium titanate (BST) are dielectrics of interest. Analysis of the current-voltage curve is made from voltage sweeps to observe memristive behavior of these dielectric materials. The sixty-forty composition of BST largely does not show memristive behavior. The same voltage values throughout the voltage sweep do not significantly alter the current value, indicating that the devices are not switching between the high and low resistance states. The seventy-thirty composition of BST largely shows memristive behavior on only the positive side of the voltage sweep, clearly switching from high resistance state to low resistance state. However, the seventy-thirty composition shows similar behavior to the sixty-forty composition on the negative side of the voltage sweep.

Publication Date

4-23-2025

Project Designation

Honors Thesis

Primary Advisor

Guru Subramanyam

Primary Advisor's Department

Electrical and Computer Engineering

Keywords

Stander Symposium, School of Engineering

Institutional Learning Goals

Practical Wisdom; Scholarship; Critical Evaluation of Our Times

Observations of Memristive Behavior for Ba0.6Sr0.4TiO3 and Ba0.7Sr0.3TiO3 Through Current Voltage Curve Analysis

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