Integration of 2D materials with silicon photonics

Integration of 2D materials with silicon photonics

Presenter(s)

Ifeanyi Njoku

Comments

10:00-10:20, Kennedy Union 311

Description

This project aims to develop and fabricate a non-volatile memory (NVM) device based on 2D ferroelectric material integrated with silicon photonics. Here, we integrate the 2D ferroelectric material copper indium phosphorus sulfide (CuInP2S6, CIPS) on a photonic microring resonator (MRR) device for high-speed optical computing applications. Ring resonators are used for their advantage of better tunability and easier design. MRRs are vital in silicon photonic integrated circuits (PICs) because they allow precise control of light's amplitude and phase by leveraging resonance by altering the refractive index of the MRR material, which shifts its resonance wavelength, enabling functions like modulation and switching. However, this shift is temporary, as the refractive index returns to its original state once the applied voltage is removed. A ferroelectric material is required to make this change persistent (i.e., to store data), as it can retain the refractive index shift even in the absence of voltage, enabling non-volatile data storage in photonic systems. This is because ferroelectrics exhibit stable, reversible spontaneous polarization switchable by an external electric field. While CIPS has been studied in the literature as a 2D ferroelectric material for various electronic applications, its integration with silicon PICs for memory applications remains unexplored. This project addresses this gap by developing a novel high-speed ferroelectric NVM device integrating CIPS on MRRs.

Publication Date

4-23-2025

Project Designation

Graduate Research

Primary Advisor

Swapnajit Chakravarty

Primary Advisor's Department

Electro-Optics and Photonics

Keywords

Stander Symposium, School of Engineering

Institutional Learning Goals

Scholarship

Integration of 2D materials with silicon photonics

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