Presenter(s)

Tom Jacob

Comments

1:15-2:30, Kennedy Union Ballroom

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Description

Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor which has significant applications in developing future power devices and electro-optics. Interest in Ga2O3 research increased upon the demonstrations of the first MESFET1 (Metal Semiconductor Field Effect Transistor) and MOSFET2 (Metal Oxide Semiconductor Field Effect Transistor). To enhance development of Gallium oxide technologies, an understanding of temperature dependent characteristics based on carrier transport measurements for MBE (Molecular Beam Epitaxy) films is necessary. In MBE growth, a major challenge is to attain controlled doping of the semiconductor material; temperature dependent Hall measurements characterize the electrical properties of a semiconductor, indicating the level of doping. Temperature dependent Hall measurements were performed on Gallium Oxide using the Van Der Pauw method by applying electric current on a Gallium Oxide sample and subjecting it to a magnetic field under various temperatures. Properties such as mobility, conductivity, and carrier concentration of Gallium Oxide were studied using LabVIEW and OriginPro, and the data was analyzed from 5K to room temperature. The resultant carrier concentration was approximate to the expected value of 1E18 cm-3 at room temperature and showed slight variations as the temperature decreased to 5K which potentially indicates minimal defects during MBE growth. This study improves the understanding of the temperature dependent properties of Gallium Oxide and provides a method to evaluate the standards of MBE growth.References:1 Masataka Higashiwaki et al. Appl. Phys. Lett. 100, 013504 (2012)2 Masataka Higashiwaki et al. Appl. Phys. Lett. 103, 123511 (2013)

Publication Date

4-23-2025

Project Designation

Independent Research

Primary Advisor

Said Elhamri

Primary Advisor's Department

Physics

Keywords

Stander Symposium, College of Arts and Sciences

Institutional Learning Goals

Scholarship; Practical Wisdom; Critical Evaluation of Our Times

Temperature Dependent Hall Measurement of MBE Ga2O3 Using Van Der Pauw Method

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