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Memristor,the forth fundamental circuit element, has opened new phase in the realm of thin film semiconducting device. The non-volatility of memristors, used as Resistive switching RAM, is promising for applications such as DRAM, hard disks etc. The implementation of a memristor device with Tungsten Oxide (WOx) is presented in this work. The presentation addresses fundamental electrical characterization of the memristor devices for their switching performance. Resistive switching in WOx is bipolar in nature. The Pd/WOx/W made memristors become more conductive (resistive) when applied with a positive (negative) bias voltage. The conductance or resistance change is controlled by the re-distribution of oxygen vacancies (VOx) within the WOx film creating or removing conductive regions between the two electrodes. Here switching is analog type that refers to the incremental modulation of the device conductance. As a result the total change of resistance within the device goes higher which is in the range of 100. With the practical implementation of the suggested work we will be able to fabricate memristor devices with faster switching capability. Such Tungsten oxide based memristor provides better switching, assures non-volatile memory effect and also gives precise analog nature of a memory device for advanced neuromorphic application.
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Zaman, Ayesha, "Electrical Characterization of Tungsten Oxide Based Memristor for Improved Resistive Switching" (2016). Stander Symposium Posters. 737.
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