Honors Theses

Advisor

Guru Subramanyam, Ph.D.

Department

Electrical and Computer Engineering

Publication Date

4-23-2025

Document Type

Honors Thesis

Abstract

As indicated by the consistent validation of Moore’s Law, decreasing the size of electronics has been a perpetual goal for decades. Memristors have a unique way of decreasing the size of devices by performing the functions of what would normally need a group of devices. This is done by making use of the multiple states of a memristor. Additional useful qualities of memristors include ultrafast switching, low power consumption, and nonvolatile memory. There are many possible dielectrics that can be used for memristive devices, but barium-based dielectrics show promise. Sixty-forty and seventy-thirty compositions of strontium barium titanate (BST) are dielectrics of interest. Analysis of the current-voltage curve is made from voltage sweeps to observe memristive behavior of these dielectric materials. The sixty-forty composition of BST largely does not show memristive behavior, as these devices remained in a high resistance state throughout testing. The seventy-thirty composition of BST largely shows memristive behavior on only the positive side of the voltage sweep, clearly switching from high resistance state to low resistance state. However, the seventy-thirty composition shows similar behavior to the sixty-forty composition on the negative side of the voltage sweep.

Permission Statement

This item is protected by copyright law (Title 17, U.S. Code) and may only be used for noncommercial, educational, and scholarly purposes.

Keywords

Undergraduate research

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