Influence of Strain on Thermal Conductivity of Silicon Nitride Thin Films

Author(s)

Tarekul Alam, Pennsylvania State University - Main Campus
Mohan P. Manoharan, Pennsylvania State University - Main Campus
M. Amanul Haque, Pennsylvania State University - Main Campus
Christopher Muratore, University of DaytonFollow
Andrey A. Voevodin, Air Force Research Laboratory

Document Type

Article

Publication Date

3-2012

Publication Source

Journal of Micromechanics and Microengineering

Abstract

We present a micro-electro-mechanical system-based experimental technique to measure thermal conductivity of freestanding ultra-thin films of amorphous silicon nitride (Si3N4) as a function of mechanical strain. Using a combination of infrared thermal micrography and multi-physics simulation, we measured thermal conductivity of 50 nm thick silicon nitride films to observe it decrease from 2.7 W (m K)−1 at zero strain to 0.34 W (m K)−1 at about 2.4% tensile strain. We propose that such strong strain–thermal conductivity coupling is due to strain effects on fraction–phonon interaction that decreases the dominant hopping mode conduction in the amorphous silicon nitride specimens.

ISBN/ISSN

0960-1317

Comments

Permission documentation is on file.

Copyright

Copyright © 2012, IOP Publishing

Publisher

IOP Publishing

Volume

22

Peer Reviewed

yes

Issue

4

eCommons Citation

Alam, Tarekul; Manoharan, Mohan P.; Haque, M. Amanul; Muratore, Christopher; and Voevodin, Andrey A., "Influence of Strain on Thermal Conductivity of Silicon Nitride Thin Films" (2012). Chemical and Materials Engineering Faculty Publications. 134.
https://ecommons.udayton.edu/cme_fac_pub/134