In-Situ Mass Spectroscopy of ECR Silane Plasmas for Amorphous and Microcrystalline Silicon Growth

Author(s)

Young J. Song, State University of New York at Buffalo
Elena A. Guliants, University of DaytonFollow
Hak-Gyu Lee, State University of New York at Buffalo
Wayne A. Anderson, State University of New York at Buffalo

Document Type

Article

Publication Date

2000

Publication Source

MRS Spring Meeting

Abstract

ECR silane plasmas for the deposition of a-Si:H and μc-Si films were investigated by in-situ mass spectroscopy (MS) using a quadrupole residual gas analyzer. The results showed that the intensities of ionic and neutral species (H, H₂, He, Ar, Si and SiH_x) in the 2 % SiH4/He plasma are strongly dependent on the deposition conditions such as chamber pressure, input power and hydrogen dilution. In all cases, the prevalence of Si ions was observed over SiH, SiH₂ and SiH₃ ions, suggesting a high decomposition rate of the silane in the plasma. In particular, the population of atomic hydrogen in the plasma seems to play a key role in the properties of both a-Si:H and μc-Si films. For example, the increased intensity of atomic hydrogen, compared to that of molecular hydrogen, resulted in the better quality a-Si:H film, showing a higher photo and dark conductivity ratio of ~10⁵. The intensity of the hydrogen species was especially sensitive to the chamber pressure. The correlation between MS spectra and film properties is presented.

ISBN/ISSN

1946-4724

Comments

Permission documentation is on file.

Copyright

Copyright © 2000, Materials Research Society

Publisher

Cambridge University Press

Volume

609

Peer Reviewed

yes

eCommons Citation

Song, Young J.; Guliants, Elena A.; Lee, Hak-Gyu; and Anderson, Wayne A., "In-Situ Mass Spectroscopy of ECR Silane Plasmas for Amorphous and Microcrystalline Silicon Growth" (2000). Electrical and Computer Engineering Faculty Publications. 118.
https://ecommons.udayton.edu/ece_fac_pub/118