Polycrystalline Silicon Thin Films For Microelectronic Applications

Author(s)

Elena A. Guliants, University of DaytonFollow
Young J. Song, State University of New York at Buffalo
Wayne A. Anderson, State University of New York at Buffalo

Document Type

Conference Paper

Publication Date

2000

Publication Source

MRS Spring Meeting

Abstract

Polycrystalline silicon thin films with a thickness of 0.5-2μm were grown on 25nm thick Ni prelayers by d.c. magnetron sputtering from a Si target. In contrast to the conventional sputtering, the use of a thin Ni film allows the production of high crystallinity silicon at a temperature of 475°C and higher. The Ni disilicide grains formed at the Ni - growing Si film interface provide sufficient sites for the epitaxial growth of Si. The Si films with resistivity of 10²-10³Ω-cm possess a carrier lifetime of up to 11μs and a diffusion length of up to 3.4 μm, which makes them applicable to various microelectronic devices. As an example, Schottky diodes fabricated on 0.5μm thick Si films exhibit a forward-to-reverse current ratio of 107. The technique is easily implemented on a variety of substrates.

ISBN/ISSN

1946-4724

Comments

Permission documentation is on file.

Copyright

Copyright © 2000, Materials Research Society

Publisher

Cambridge University Press

Volume

609

Peer Reviewed

yes

eCommons Citation

Guliants, Elena A.; Song, Young J.; and Anderson, Wayne A., "Polycrystalline Silicon Thin Films For Microelectronic Applications" (2000). Electrical and Computer Engineering Faculty Publications. 119.
https://ecommons.udayton.edu/ece_fac_pub/119