A Novel Method of Structure Control in Si Thin Film Technology
Journal of The Electrochemical Society
A technological method of thin film silicon growth with an unconventional structure control has been uncovered. It involves a concurrence of metal-induced crystallization with direct growth of crystalline silicon at temperatures of ca. 575°C. Thermally evaporated 5-100 nm thick Ni films were used as prelayers for magnetron sputtered Si films. The thickness of a Ni prelayer was established to significantly alter the silicon film growth, providing a large-grain columnar structure when occurring in the 25-30 nm range, and diminishing the Si grain size toward corresponding lower and higher values of the Ni thickness. The phenomenon is attributed to the silicide nucleation processes at the Ni-Si interface. A decrease in the kinetic energy of the arriving Si atoms accomplished by lowering the magnetron power led to the formation of self-organized nanostructures on the Si film surface suggesting the Stranski-Krastanov growth mode which is also induced by the Ni silicide prelayer. Theoretical aspects of Si film growth are briefly discussed.
Copyright © 2001, The Electrochemical Society
The Electrochemical Society
Guliants, Elena A. and Anderson, Wayne A., "A Novel Method of Structure Control in Si Thin Film Technology" (2001). Electrical and Computer Engineering Faculty Publications. 121.