Self-Assembly of Spatially Separated Silicon Structures by Si Heteroepitaxy on Ni Disilicide

Author(s)

Elena A. Guliants, University of DaytonFollow
Chunhai Ji, State University of New York at Buffalo
Wayne A. Anderson, State University of New York at Buffalo

Document Type

Article

Publication Date

2002

Publication Source

Journal of Applied Physics

Abstract

A nonlithographic approach to produce self-assembled spatially separated Si structures for nanoelectronic applications was developed, employing the metal-induced silicon growth. Densely packed Si whiskers, 500–800 nm thick and up to 2500 nm long, were obtained by magnetron sputtering of Si on a 25 nm thick Ni prelayer at 575 °C. The nucleation of the NiSi2 compound at the Ni–Si interface followed by the Si heteroepitaxy on the lattice-matched NiSi2 is suggested to be the driving force for the whisker formation.

Inclusive pages

6077-6080

ISBN/ISSN

0021-8979

Document Version

Published Version

Comments

This document is provided for download in compliance with the publisher's policy on self-archiving. Permission documentation is on file.

Copyright

Copyright © 2002, American Institute of Physics

Publisher

American Institute of Physics

Volume

91

Peer Reviewed

yes

Issue

9

eCommons Citation

Guliants, Elena A.; Ji, Chunhai; and Anderson, Wayne A., "Self-Assembly of Spatially Separated Silicon Structures by Si Heteroepitaxy on Ni Disilicide" (2002). Electrical and Computer Engineering Faculty Publications. 128.
https://ecommons.udayton.edu/ece_fac_pub/128