Generalized Memristive Device SPICE Model and its Application in Circuit Design

Document Type

Article

Publication Date

8-2013

Publication Source

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Abstract

This paper presents a SPICE model for memristive devices. It builds on existing models and is correlated against several published device characterization data with an average error of 6.04%. When compared to existing alternatives, the proposed model can more accurately simulate a wide range of published memristors. The model is also tested in large circuits with up to 256 memristors, and was less likely to cause convergence errors when compared to other models. We show that the model can be used to study the impact of memristive device variation within a circuit. We examine the impact of nonuniformity in device state variable dynamics and conductivity on individual memristors as well as a four memristor read/write circuit. These studies show that the model can be used to predict how variation in a memristor wafer may impact circuit performance.

Inclusive pages

1201-1214

ISBN/ISSN

0278-0070

Comments

Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

Publisher

IEEE

Volume

32

Peer Reviewed

yes

Issue

8

Keywords

Memristors, Mathematical model, Integrated circuit modeling, SPICE, Equations, Data models, Resistance


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