Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices

Author(s)

Pengfei Guo, University of Dayton
Joshua A. Burrow (0000-0002-1237-4662), University of Dayton
Gary A. Sevison (0000-0002-6832-0356), University of Dayton
Heungdong Kwon, Stanford University
Christopher Perez, Stanford University
Joshua R. Hendrickson (0000-0002-5342-0346), Air Force Research Laboratory
Evan M. Smith, Air Force Research Laboratory
Mehdi Asheghi, Stanford University
Kenneth E. Goodson, Stanford University
Imad Agha, University of DaytonFollow
Andrew M. Sarangan, University of DaytonFollow

Document Type

Article

Publication Date

3-30-2020

Publication Source

Applied Physics Letters

Abstract

The large impedance mismatch between the highly resistive amorphous state and the highly conductive crystalline state of Ge 2 Sb 2 Te 5 is an impediment for the realization of high-speed electrically switched optical devices. In this paper, we demonstrate that tungsten doping can reduce this resistivity contrast and also results in a lower amorphous state resistivity. Additionally, it lowers the contact resistance, improves the optical contrast, and extends the face-centered-cubic state up to 35 0 ° C, with a minimal impact on thermal conductivity.

ISBN/ISSN

0003-6951

Publisher

AIP Publishing

Volume

116

Issue

13

Sponsoring Agency

National Science Foundation, 1709200

eCommons Citation

Guo, Pengfei; Burrow, Joshua A.; Sevison, Gary A.; Kwon, Heungdong; Perez, Christopher; Hendrickson, Joshua R.; Smith, Evan M.; Asheghi, Mehdi; Goodson, Kenneth E.; Agha, Imad; and Sarangan, Andrew M., "Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices" (2020). Electro-Optics and Photonics Faculty Publications. 133.
https://ecommons.udayton.edu/eop_fac_pub/133