Title

Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices

Document Type

Article

Publication Date

3-30-2020

Publication Source

Applied Physics Letters

Abstract

The large impedance mismatch between the highly resistive amorphous state and the highly conductive crystalline state of Ge 2 Sb 2 Te 5 is an impediment for the realization of high-speed electrically switched optical devices. In this paper, we demonstrate that tungsten doping can reduce this resistivity contrast and also results in a lower amorphous state resistivity. Additionally, it lowers the contact resistance, improves the optical contrast, and extends the face-centered-cubic state up to 35 0 ° C, with a minimal impact on thermal conductivity.

ISBN/ISSN

0003-6951

Publisher

AIP Publishing

Volume

116

Issue

13

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