Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices
Applied Physics Letters
The large impedance mismatch between the highly resistive amorphous state and the highly conductive crystalline state of Ge 2 Sb 2 Te 5 is an impediment for the realization of high-speed electrically switched optical devices. In this paper, we demonstrate that tungsten doping can reduce this resistivity contrast and also results in a lower amorphous state resistivity. Additionally, it lowers the contact resistance, improves the optical contrast, and extends the face-centered-cubic state up to 35 0 ° C, with a minimal impact on thermal conductivity.
National Science Foundation, 1709200
Guo, Pengfei; Burrow, Joshua A.; Sevison, Gary A.; Kwon, Heungdong; Perez, Christopher; Hendrickson, Joshua R.; Smith, Evan M.; Asheghi, Mehdi; Goodson, Kenneth E.; Agha, Imad; and Sarangan, Andrew M., "Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices" (2020). Electro-Optics and Photonics Faculty Publications. 133.