Date of Award
1984
Degree Name
Ph.D. in Engineering
Abstract
RADIATION EFFECTS ON GALLIUM ARSENIDE CHARGE COUPLED DEVICES WITH HIGH RESISTIVITY GATE STRUCTURES
Raymond D. Bellem
University of Dayton, 1984
Major Professor: Dr. B. M. Schmidt
A GaAs CCD using a continuous high resistivity Schottky barrier gate structure was characterized using the periodic pulse technique. Devices fabricated by molecular beam epitaxy, metallorganic CVD and ion inplantation were used. Pre-radiation electron traps in the GaAs active region were found at .28, .39, .45, and .58 eV below the conduction band edge. Trap densities ranged from 1 x 1013 cm-3 to 1 x 1014 cm - 3• Dark current densities at 300°K were measured and ranged from 6 x 10-6 amp/cm2 to 10 -3 amp/cm2 • The effects of 1 MeV electrons and 1 MeV neutrons were investigated. Electron traps El,2 and E3 at 0.1 eV and .39 eV were measured following 1 MeV electron irradiation. Trap densities after electron fluency levels up to 6xl0 14 cm -2 were measured with trap generation rates calculated at 1 cm-l for El,2 and .25 cm-l for E3. Changes in device charge transfer inefficiency (CTI) due to trapping effects were plotted over the temperature range 80°K to 320°K. Electron trapping due to 1 MeV neutron was observed at a level of .64 eV below the conduction band. Trap generation data could not be accurately assessed due to experimental difficulties at fluences greater then 6x 10 13 neutrons/cm2 • The periodic pulse technique proved a powerful tool for characterization of bulk trapping and dark currents in GaAs CCD's.
Keywords
Gallium arsenide semiconductors, Semiconductors Effect of radiation on, Charge coupled devices
Rights Statement
Copyright © 1984, author
Recommended Citation
Bellem, Raymond Del Favero, "Radiation effects on Gallium arsenide charge coupled devices with high resistivity gate structures" (1984). Graduate Theses and Dissertations. 1484.
https://ecommons.udayton.edu/graduate_theses/1484
