Date of Award
1983
Degree Name
M.S. in Materials Engineering
Keywords
Semiconductor doping, Neutron transmutation, Neutron irradiation
Rights Statement
Copyright © 1983, author
Recommended Citation
Gassman, Richard Albert, "Isothermal annealing study of neutron transmutation doped silicon:gallium" (1983). Graduate Theses and Dissertations. 2835.
https://ecommons.udayton.edu/graduate_theses/2835
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