Date of Award
1993
Degree Name
M.S. in Electrical Engineering
Keywords
Semiconductor-metal boundaries, Gallium arsenide semiconductors, Silicides, Refractory transition metal compounds, Germanium compounds
Rights Statement
Copyright © 1993, author
Recommended Citation
Scofield, James Douglas, "Development and characterization of refractory silicidegermanide and graded bandgap ohmic contact metallizations for GaAs" (1993). Graduate Theses and Dissertations. 5468.
https://ecommons.udayton.edu/graduate_theses/5468
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