Title

Development and characterization of refractory silicidegermanide and graded bandgap ohmic contact metallizations for GaAs

Date of Award

1993

Degree Name

M.S. in Electrical Engineering

Keywords

Semiconductor-metal boundaries, Gallium arsenide semiconductors, Silicides, Refractory transition metal compounds, Germanium compounds

Rights Statement

Copyright 1993, author

This document is currently not available here.

Share

COinS