Silicon Compatible Short-Wave Infrared Photonic Devices

Date of Award


Degree Name

M.S. in Electro-Optics


Department of Electro-Optics


Advisor: Imad Agha


In the last 10 years, the field of integrated photonics has gained prominence due to the need for higher bandwidths for communications, at lower cost. To have fully integrated devices on-chip, silicon compatibility becomes a necessity. This thesis explores two different devices that are compatible with silicon and therefore lend themselves to full on-chip integration. The first device is a p-i-n structure photodiode created with Germanium Tin (GeSn). The device shows a promising extended infrared range compared to a device made from pure Germanium (Ge). Time-resolved power dependent measurements on the responsivity were taken and reveal the different recombination mechanisms occurring in the device. The second device is a non-volatile memory created from Germanium Antimony Tellurium (GST). Here it is shown that by laser illumination, the GST film can be switched from a highly reflective/conducting crystalline state, to a less reflective/resistive amorphous state and back again. Ellipsometry was done on the individual states to show that they have drastically different indices of refraction and extinction coefficients, which can be utilized to create many novel silicon compatible devices.


Optics, Phase Change Materials, GST, Germanium Antimony Tellurium, Germanium Tin, GeSn, Photodetector, Non-Volatile Memory

Rights Statement

Copyright © 2018, author