Design Methodology of Event-Based Pixel Circuits in 130nm, 90nm, and 65nm

Date of Award

5-5-2024

Degree Name

M.S. in Electrical and Computer Engineering

Department

Department of Electrical and Computer Engineering

Advisor/Chair

Keigo Hirakawa

Abstract

In this project, we developed new designs for event-based pixel sensors and their related biasing circuits for 130nm, 90nm, and 65nm silicon processes. This was done by selecting new width and length (W/L) ratios for each process, creating a new reset configuration, and modifying the designs of the bias current generators to work for smaller silicon processes. Through our simulations, we found that our design was able to generate the expected output behavior of an event camera to different photocurrent inputs. Additionally, we performed preliminary radiation analysis on the generated design for varying inputs and ion strikes. It was found that OFF event detections were more susceptible to false event triggers than ON events, as weaker ion strikes were able to trigger them.

Keywords

event cameras, event based vision, pixel sensors, dynamic vision sensor, DVS sensor, analog VLSI

Rights Statement

Copyright 2024, author

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