Fabrication and Electrical Characterization of ITIO Thin-Film Transistors with Analysis of Device Geometry Effects

Date of Award

5-9-2026

Degree Name

M.S. in Electro-Optics

Department

Department of Electro-Optics and Photonics

Advisor/Chair

Swapnajit Chakravarty

Abstract

A field-effect transistor (FET) is a semiconductor device that controls the flow of current in a channel through an electric field applied by a gate electrode. This dissertation investigates the feasibility of using 1% Titanium doped indium oxide (ITiO) as a novel channel material in FET devices and systematically compares its electrical performance with conventional indium tin oxide (ITO) based structures. While ITO is widely used as a transparent conductive oxide, its high intrinsic carrier concentration often leads to degenerate, metal-like conductivity, limiting effective gate modulation when employed as a channel material. To address this limitation, 1% Titanium doped indium oxide (ITiO) is introduced as an alternative for my research. By adjusting the material composition, ITiO may give better control of charge carriers and improved gate modulation compared to conventional ITO based devices. ITiO is expected to enhance electrostatic controllability and provide improved transistor switching behavior compared to conventional ITO-based devices. In this work, FET devices were fabricated using ITiO as the channel layer and aluminum oxide (AlxOy ) as the gate dielectric. The devices were characterized through electrical measurements including current-voltage transfer characteristics (IDS–VGS), output characteristics (IDS–VDS),and threshold voltage extraction, and transconductance analysis. The fabricated devices demonstrated clear transistor behavior with an on/off current ratio, a threshold voltage. The results suggest that ITiO is a promising channel material for oxide-based FET applications. This work provides insight into the potential of ITiO for future oxide semiconductor device technologies.

Keywords

Electrical Engineering, Nanotechnology, Optics

Comments

OCLC No. 1591225431

Rights Statement

Copyright 2026, author.

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