Changes in the Piezoelectric Response of Reactive Magnetron Sputtered Aluminum Nitride at Different Sputter Powers

Changes in the Piezoelectric Response of Reactive Magnetron Sputtered Aluminum Nitride at Different Sputter Powers

Presenter(s)

Rachel L Adams

Description

Aluminum nitride (AlN) is a low-loss piezoelectric material that is commonly used in surface acoustic wave and bulk acoustic wave-based filters for radio frequency communication applications. For this material to be incorporated into devices, a more thorough understanding of the effects of different deposition parameters on the crystallinity and piezoelectric coefficient is needed. In this study, all the AlN films were deposited using reactive controllably unbalanced magnetron sputtering onto (0001)-orientated sapphire substrates. X-ray diffraction was used to characterize the crystallinity and atomic force microscopy was used to investigate the surface morphology of the films. Piezoelectric force microscopy was done to measure the piezoelectric coefficient of the films. The effects of changing the sputter power during the deposition on the crystallinity, surface morphology and piezoelectric coefficient will be presented.

Publication Date

4-24-2019

Project Designation

Honors Thesis

Primary Advisor

Said Elhamri

Primary Advisor's Department

Physics

Keywords

Stander Symposium project

Changes in the Piezoelectric Response of Reactive Magnetron Sputtered Aluminum Nitride at Different Sputter Powers

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