Impact of β-Gallium Oxide Growth Conditions on Surface Roughness
Presenter(s)
Carlos Ruben DeLeon
Files
Description
β-Gallium Oxide (Ga 2 O 3 ), the most stable phase of Ga 2 O 3 , is a semiconductor with an ultra-wide bandgap and has applications in high power electronic devices. In this study, we investigated the impact of Gallium beam flux on the surface roughness in order to maximize the growth rate of Ga 2 O 3 . The Ga 2 O 3 films were grown by plasma-assisted molecular beam epitaxy (MBE) and were characterized using atomic force microscopy (AFM). Five samples were grown and measured. The beam flux for these samples were: 1.6 × 10 -7 , 8.0 × 10 -8 , 4.0 × 10 -8 , 3.0 × 10 -8 ,and 2.0 × 10 -8 Torr. With the exception of the first sample, our results convey a decrease of surface roughness with the decreasing Gallium beam flux.
Publication Date
4-22-2020
Project Designation
Independent Research
Primary Advisor
Said Elhamri
Primary Advisor's Department
Physics
Keywords
Stander Symposium project, College of Arts and Sciences
Recommended Citation
"Impact of β-Gallium Oxide Growth Conditions on Surface Roughness" (2020). Stander Symposium Projects. 1910.
https://ecommons.udayton.edu/stander_posters/1910
