Impact of β-Gallium Oxide Growth Conditions on Surface Roughness

Impact of β-Gallium Oxide Growth Conditions on Surface Roughness

Presenter(s)

Carlos Ruben DeLeon

Description

β-Gallium Oxide (Ga 2 O 3 ), the most stable phase of Ga 2 O 3 , is a semiconductor with an ultra-wide bandgap and has applications in high power electronic devices. In this study, we investigated the impact of Gallium beam flux on the surface roughness in order to maximize the growth rate of Ga 2 O 3 . The Ga 2 O 3 films were grown by plasma-assisted molecular beam epitaxy (MBE) and were characterized using atomic force microscopy (AFM). Five samples were grown and measured. The beam flux for these samples were: 1.6 × 10 -7 , 8.0 × 10 -8 , 4.0 × 10 -8 , 3.0 × 10 -8 ,and 2.0 × 10 -8 Torr. With the exception of the first sample, our results convey a decrease of surface roughness with the decreasing Gallium beam flux.

Publication Date

4-22-2020

Project Designation

Independent Research

Primary Advisor

Said Elhamri

Primary Advisor's Department

Physics

Keywords

Stander Symposium project, College of Arts and Sciences

Impact of β-Gallium Oxide Growth Conditions on Surface Roughness

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