Tobin C. Muratore
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Recently, bismuth chalcogenides have been of interest as topological insulators, especially for their potential use in polarized light detecting and other devices. In particular, Bi4Se3 presents a topologically insulating material which contains a native heterostructure of Bi2Se3 and Bi2 layers, each with its own topological state. In spite of these valuable properties, the growth of Bi4Se3 via magnetron sputtering remains less studied. This study elaborates the properties of Bi4Se3 films grown in a magnetron sputtering system with an external magnetic field. Numerous films were grown on heated sapphire substrates with different deposition temperatures, external magnetic field orientations, and annealing procedures. These films were characterized via X-ray diffraction (XRD), and the X-ray results were analyzed to determine crystallite size. This characterization indicates the role of temperature in determining whether the deposition produces an amorphous, polycrystalline, or primarily basally oriented film. In addition to XRD, some films were characterized by Angle-Resolved Photoemission Spectroscopy to observe the variation in electrical properties in the amorphous, polycrystalline, and basally-oriented films. Results display a clear effect of external field orientation on film microstructure. Additionally, annealing appears to effect microstructure as well and demonstrates a clear ordering effect on the films.
Primary Advisor's Department
Stander Symposium project, College of Arts and Sciences
"Effects of Deposition Temperature, External Magnetic Field, and Annealing for Magnetron Sputtering Deposition of Bi4Se3 Thin Films" (2022). Stander Symposium Projects. 2550.