Optical band gap study of Bi2 Se3-In2 Se3 superlattices

Optical band gap study of Bi2 Se3-In2 Se3 superlattices

Presenter(s)

Mark R. Gordon

Comments

Presentation: 9:00-10:15, Kennedy Union Ballroom

Description

Topological materials are some of the most promising quantum materials for future deviceapplications. In particular, topological superlattices comprised of Bi2 Se3 and In2 Se3 are of greatinterest because they show potential for creating Anisotropic Magneto-Resistive (AMR) sensorsthat can detect changes in the angle of a magnetic field. The creation of AMR sensors with theaforementioned topological materials would have many advantages over the traditional ones.These advantages include less susceptibility to stray field interactions, sensors having full vectorfield resolution, less power consumption, and no saturation up to 60 T. This is expected to havewidespread device applications in geological sensing, bio magnetic sensing, and navigation. Thiswork investigates the optical band gap as a function of the Bi2 Se3-In2 Se3 superlattice layerthickness, grown by Direct Current Coil Assisted Magnetron Sputtering, using UltravioletVisible light Spectroscopy and cross-sectional Scanning Electron Microscopy.

Publication Date

4-17-2024

Project Designation

Independent Research

Primary Advisor

Said Elhamri

Primary Advisor's Department

Physics

Keywords

Stander Symposium, College of Arts and Sciences

Institutional Learning Goals

Scholarship; Critical Evaluation of Our Times; Practical Wisdom

Optical band gap study of Bi2 Se3-In2 Se3 superlattices

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