Optical band gap study of Bi2 Se3-In2 Se3 superlattices

Optical band gap study of Bi2 Se3-In2 Se3 superlattices

    Presenter(s)

    Mark R. Gordon

    Comments

    Presentation: 9:00-10:15, Kennedy Union Ballroom

    Description

    Topological materials are some of the most promising quantum materials for future deviceapplications. In particular, topological superlattices comprised of Bi2 Se3 and In2 Se3 are of greatinterest because they show potential for creating Anisotropic Magneto-Resistive (AMR) sensorsthat can detect changes in the angle of a magnetic field. The creation of AMR sensors with theaforementioned topological materials would have many advantages over the traditional ones.These advantages include less susceptibility to stray field interactions, sensors having full vectorfield resolution, less power consumption, and no saturation up to 60 T. This is expected to havewidespread device applications in geological sensing, bio magnetic sensing, and navigation. Thiswork investigates the optical band gap as a function of the Bi2 Se3-In2 Se3 superlattice layerthickness, grown by Direct Current Coil Assisted Magnetron Sputtering, using UltravioletVisible light Spectroscopy and cross-sectional Scanning Electron Microscopy.

    Publication Date

    4-17-2024

    Project Designation

    Independent Research

    Primary Advisor

    Said Elhamri

    Primary Advisor's Department

    Physics

    Keywords

    Stander Symposium, College of Arts and Sciences

    Institutional Learning Goals

    Scholarship; Critical Evaluation of Our Times; Practical Wisdom

    Optical band gap study of Bi2 Se3-In2 Se3 superlattices

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