Honors Theses
Advisor
Dr. Swapnajit Chakravarty
Department
Electrical and Computer Engineering
Publication Date
4-22-2026
Document Type
Honors Thesis
Abstract
This work investigates the electrical performance and reliability of thin-film amorphous oxide field-effect transistors based on titanium-doped indium oxide (In₂O₃:Ti) as the channel material. Devices were fabricated and systematically characterized through current-voltage (I-V) measurements to extract key parameters including threshold voltage, subthreshold swing, and on/off current ratio. Devices were also characterized using a positive and negative bias temperature instability (PBTI/NBTI) to determine the reliability of the devices.
Permission Statement
This item is protected by copyright law (Title 17, U.S. Code) and may only be used for noncommercial, educational, and scholarly purposes.
Keywords
Undergraduate research
eCommons Citation
Weaver, David, "Characterization and Reliability of Amorphous Oxide Thin-Film Field-Effect Transistors" (2026). Honors Theses. 526.
https://ecommons.udayton.edu/uhp_theses/526
COinS
