Electrically Injected GeSn Lasers towards Room Temperature

Electrically Injected GeSn Lasers towards Room Temperature

    Presenter(s)

    Nicholas Saunders

    Comments

    Presentation: 10:45 a.m.-12:00 p.m., Kennedy Union Ballroom

    Description

    Use of group IV materials for semiconductors offers many benefits compared to traditional group III-V materials. Germanium tin (GeSn) in particular has a direct bandgap above 8% Sn composition, making it ideal for use in optoelectronic devices. GeSn is also complementary metal-oxide-semiconductor (CMOS) compatible and has potential applications in infrared imaging and light detection and ranging (LIDAR) technology. However, electrically injected GeSn lasers have not yet been extensively researched. The operating temperatures for such devices are low, with the world record highest temperature at 110 K. Higher operating temperatures are desired to increase use in applications. A PIN-doped GeSn wafer was prepared by chemical vapor deposition (CVD) and wet etching. Electrodes were deposited and wire bonded to an Si carrier chip to form a PIN-diode. The sample was electrically injected using a pulsed voltage source. The electroluminescence (EL) spectra and light output versus current (LI) curves were measured. The device successfully lased with a wavelength of 2688 nm at the maximum temperature of 135 K. This beat the previous world record operating temperature by 25 K. The threshold current density was 701 A/cm2 at 77 K and 2813 A/cm2 at 135 K. Alterations in material growth and device structure need to be studied in order to further increase operating temperature to room temperature.

    Publication Date

    4-20-2022

    Project Designation

    Independent Research

    Primary Advisor

    Shui-Qing Yu, University of Arkansas

    Primary Advisor's Department

    Electrical and Computer Engineering

    Keywords

    Stander Symposium project, School of Engineering

    United Nations Sustainable Development Goals

    Affordable and Clean Energy

    Electrically Injected GeSn Lasers towards Room Temperature

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