Presenter(s)

    Tristan David Quach

    Comments

    Presentation: 1:40-2:00, LTC Forum

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    Description

    Ferroelectric materials form the backbone of silicon electronic memristor devices in silicon electronics and are gradually becoming more prevalent in silicon photonics for optical memory applications. In this context, hafnium zirconium oxide (HZO), an established material in the silicon electronics foundry, is making inroads in silicon photonics aided by its nearly zero absorption at near-infrared wavelengths that makes it compatible for integration with silicon photonic waveguides and resonators. A fundamental measurement technique to characterize ferroelectric material behavior is PUND. The acronym stands for positive up negative down. A PUND measurement is a series of five pulses based around the values of max voltage, period, and pulse width. PUND starts with a negative pulse used to preset the sample. The next two pulses are in positive volts. The last two pulses are in negative volts. This project aims to find ferroelectric properties of a HZO device using PUND measurements. To this end, the needed parameters for the PUND measurement must be found to adequately characterize the hysteresis behavior of the devices. The desired voltage and pulse width are 1V and 1 millisecond respectively. The pulse delay (the time from the end of one pulse to the start of the next) must be long enough to allow the device to discharge between PUND pulses. Once the necessary pulse delay for discharge between pulses is found, the number of PUND cycles the device must go through in order to show ferroelectric behavior, the wake-up effect, must be found. We will present initial measurement results.

    Publication Date

    4-17-2024

    Project Designation

    Independent Research

    Primary Advisor

    Swapnajit Chakravarty

    Primary Advisor's Department

    Electro-Optics and Photonics

    Keywords

    Stander Symposium, School of Engineering

    Institutional Learning Goals

    Practical Wisdom

    PUND Behavior of an HZO Device

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