Presenter(s)

Tristan David Quach

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Presentation: 1:40-2:00, LTC Forum

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Description

Ferroelectric materials form the backbone of silicon electronic memristor devices in silicon electronics and are gradually becoming more prevalent in silicon photonics for optical memory applications. In this context, hafnium zirconium oxide (HZO), an established material in the silicon electronics foundry, is making inroads in silicon photonics aided by its nearly zero absorption at near-infrared wavelengths that makes it compatible for integration with silicon photonic waveguides and resonators. A fundamental measurement technique to characterize ferroelectric material behavior is PUND. The acronym stands for positive up negative down. A PUND measurement is a series of five pulses based around the values of max voltage, period, and pulse width. PUND starts with a negative pulse used to preset the sample. The next two pulses are in positive volts. The last two pulses are in negative volts. This project aims to find ferroelectric properties of a HZO device using PUND measurements. To this end, the needed parameters for the PUND measurement must be found to adequately characterize the hysteresis behavior of the devices. The desired voltage and pulse width are 1V and 1 millisecond respectively. The pulse delay (the time from the end of one pulse to the start of the next) must be long enough to allow the device to discharge between PUND pulses. Once the necessary pulse delay for discharge between pulses is found, the number of PUND cycles the device must go through in order to show ferroelectric behavior, the wake-up effect, must be found. We will present initial measurement results.

Publication Date

4-17-2024

Project Designation

Independent Research

Primary Advisor

Swapnajit Chakravarty

Primary Advisor's Department

Electro-Optics and Photonics

Keywords

Stander Symposium, School of Engineering

Institutional Learning Goals

Practical Wisdom

PUND Behavior of an HZO Device

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