Presenter(s)

    Soham Kadam, Godwin Mante, Nikunjkumar Padhiyar

    Comments

    3:00-4:15, Kennedy Union Ballroom

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    Description

    Semiconductors with intermediate bandgaps have gained significant attention for enhancing photovoltaic efficiency and expanding optoelectronic applications. In this study, we investigate the structural and electronic properties of Cu₃VSₓSe4-x, a promising light-absorbing semiconductor. We systematically introduce selenium as a novel substituent to tune the optical band gap of the material. Selenium substitution is demonstrated to enhance electrical conductivity, carrier mobility, and quantum efficiency in photovoltaic applications. To the best of our knowledge, this is the first report of the intermediate band gap Cu3VSxSe4-x nanocrystals. The material was synthesized using a modified hot-injection reaction method and its crystallographic structure was confirmed through X-ray diffraction (XRD) analysis. Ultraviolet visible (UV-Vis) spectroscopy revealed an optimal intermediate band gap, positioning this material as a strong candidate for efficient solar energy conversion. Further investigations into long-term stability under operational conditions and carrier transport dynamics will be crucial for practical implementation in next-generation solar cells and optoelectronic devices. Keywords: Intermediate Band gap, Cu₃VSₓSe4-x, Semiconductor, Light Absorption, Optoelectronics

    Publication Date

    4-23-2025

    Project Designation

    Course Project - MAT 595 05

    Primary Advisor

    Soubantika Palchoudhury

    Primary Advisor's Department

    Chemical and Materials Engineering

    Keywords

    Stander Symposium, School of Engineering

    Institutional Learning Goals

    Scholarship; Practical Wisdom

    Synthesis and Characterization of Cu3VSxSe4-x Nanocrystals: Intermediate Band Gap and Potential Solar Energy Application.

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